t4 - lds - 0216, rev. 1 (111512) ?2011 microsemi corporation page 1 of 3 1n5186 thru 1n5188, 1n5190 available on commercial versions voidless- hermetically sealed fast recovery glass rectifiers qualified per mil -prf- 19500/424 qualified levels : jan, jantx and jantxv descriptio n this fast recovery rectifier diode series is military qualified and is id eal for high - reliability applications where a failure cannot be tolerated. these industry - recognized 3.0 a mp rated rectifiers for working peak reverse voltages from 100 to 600 volts are hermetical ly sealed with voidless - glass construction using an internal category 1 metallurgical bond. microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirement s including fast and ultrafast device types in both through - hole and surface mount packages. b package important: for the latest information, visit our website http://www.microsemi.com . features ? jede c registered 1n5186 thru 1n5190 series . ? voidless hermetically sealed glass package. ? working peak reverse voltage 100 to 600 v olts. ? internal category i metallurgical bond. ? jan, jantx, and jantxv qualification s are available per mil - prf - 19500/424 . ? rohs com pliant versions available (commercial grade only). applications / benefits ? fast recovery 3 a mp 100 to 600 volt rectifiers. ? military and other high - reliability applications. ? general rectifier applications including bridges, half - bridges, catch diodes, etc. ? high forward surge current capability. ? extremely robust construction. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 tel: (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to +175 o c thermal resistance junction - to - lead (1) r ? jl 20 o c /w forward surge current @ 8.3 ms half - sine , t a = + 150 o c i fsm 80 a working peak reverse voltage 1n5186 1n5187 1n5188 1n5190 v rw m 100 200 400 600 v average rectified forward current @ t a = + 25 o c @ t a = + 150 o c i o 3.0 0.700 a max imum reverse recovery time 1n5186 1n5187 1n5188 1n5190 t rr 150 200 250 400 ns solder temperature @ 10 s t sp 260 o c notes : 1. at 3/8 inch (10 mm) lead length from body. downloaded from: http:///
t4 - lds - 0216, rev. 1 (111512) ?2011 microsemi corporation page 2 of 3 1n5186 thru 1n5188, 1n5190 mechanical and packaging ? case: hermetically sealed voidless hard glas s with t ungsten slugs. ? termina l s: tin/ l ead (sn/pb) over n ickel ( ni ) coat or rohs compliant matte -t in (commercial grade only) over c opper. ? marking: body is coated and marked with part number . ? polarity: cathode band. ? tape & reel option: standard per eia - 296. consult factory for quantities. ? w eight: 7 97 m illigrams . ? see p ackage d imensions on last page. part nomenclature jan 1n5186 e3 reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant jedec type number see electrical characteristics t able symbols & definitions symbo l definition v ( br) minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified curr ent. i r maximum leakage current: the maximum leakage current that will flow at the specified voltage and t emperature. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified decay point after a peak reverse current occur s. electrical characteristics type minimum breakdown voltage v ( br) @ 100 a forward voltage v f @ 9 a (pulsed) maximum reverse current i r @ v rwm volts min volts max volts 25 o c 100 o c a a 1n5186 1n5187 1n5188 1n5190 120 240 480 660 0.9 0.9 0.9 0.9 1.5 1.5 1.5 1.5 2.0 2.0 2.0 2.0 100 100 100 100 downloaded from: http:///
t4 - lds - 0216, rev. 1 (111512) ?2011 microsemi corporation page 3 of 3 1n5186 thru 1n5188, 1n5190 p ackage dimensions sy mbol dimension notes inch millimeters min max min max bd 0 .115 0 .155 2.92 3.94 3 ld 0 .038 0 .042 0.97 1.07 bl 0 .150 0 .300 3.81 7.62 4 ll 1.00 1.50 25.40 38.10 no t es: 1. dimensions are in inches. 2. millimeter s are given for general information onl y. 3. dimension bd shall be measured at the largest diameter. t he bl dimension shall include the entire body including slugs. 4. dimension bl shall include the sections of the lead over wh ich the diameter is uncont rolled. th is uncontrolled area is defined as t he zone bet w een the edge of the diode body and e x tending .050 inch (1.27 mm) onto the leads. 5. in accordance w ith asme y14.5m, diameters are equivalent to x sy mbolog y. downloaded from: http:///
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